Twin-domain formation in epitaxial triangular lattice delafossites

TL;DR

This paper investigates the formation of twin domains in epitaxial delafossite thin films, revealing the role of surface termination and substrate symmetry, and demonstrates methods to grow twin-free, high-quality single-domain films.

Contribution

It uncovers the mechanism behind twin domain formation in delafossite thin films and introduces a synthesis strategy for producing twin-free, high-quality epitaxial films.

Findings

Surface termination determines domain structure.

Robust heteroepitaxial relationship identified.

Twin-free films achieved on high-miscut substrates.

Abstract

Twin domains are often found as structural defects in symmetry mismatched epitaxial thin films. The delafossite ABO2, which has a rhombohedral structure, is a good example that often forms twin domains. Although bulk metallic delafossites are known to be the most conducting oxides, the high conductivity is yet to be realized in thin film forms. Suppressed conductivity found in thin films is mainly caused by the formation of twin domains, and their boundaries can be a source of scattering centers for charge carriers. To overcome this challenge, the underlying mechanism for their formation must be understood, so that such defects can be controlled and eliminated. Here, we report the origin of structural twins formed in a CuCrO2 delafossite thin film on a substrate with hexagonal or triangular symmetries. A robust heteroepitaxial relationship is found for the delafossite film with the substrate, and the surface termination turns out to be critical to determine and control the domain structure of epitaxial delafossites. Based on such discoveries, we also demonstrate a twin-free epitaxial thin films grown on high-miscut substrates. This finding provides an important synthesis strategy for growing single domain delafossite thin films and can be applied to other delafossites for epitaxial synthesis of high-quality thin films.