Tunable Feshbach resonances and their spectral signatures in bilayer semiconductors

TL;DR

This paper theoretically explores a solid-state analogue of Feshbach resonances in bilayer semiconductors, showing how electric field tuning can enhance inter-layer interactions and modify optical spectra, with implications for quantum phase control.

Contribution

It introduces a novel theoretical framework for Feshbach resonances in bilayer semiconductors and analyzes their spectral signatures and potential for quantum state engineering.

Findings

Resonant enhancement of inter-layer scattering via electric field tuning.

Modification of optical spectra due to inter-layer Feshbach molecules.

Potential for realizing correlated Bose-Fermi mixtures in bilayer systems.

Abstract

Feshbach resonances are an invaluable tool in atomic physics, enabling precise control of interactions and the preparation of complex quantum phases of matter. Here, we theoretically analyze a solid-state analogue of a Feshbach resonance in two dimensional semiconductor heterostructures. In the presence of inter-layer electron tunneling, the scattering of excitons and electrons occupying different layers can be resonantly enhanced by tuning an applied electric field. The emergence of an inter-layer Feshbach molecule modifies the optical excitation spectrum, and can be understood in terms of Fermi polaron formation. We discuss potential implications for the realization of correlated Bose-Fermi mixtures in bilayer semiconductors.