Modelling and design of FTJs as high reading-impedance synaptic devices
Riccardo Fontanini, Marco Massarotto, Ruben Specogna, Francesco, Driussi, Mirko Loghi, David Esseni
TL;DR
This paper introduces a modeling framework for Ferroelectric Tunnelling Junctions (FTJs) and explores their design as high-impedance synaptic devices, highlighting how dielectric properties influence performance.
Contribution
It provides a novel in-house modeling approach and insights into optimizing FTJ design for synaptic applications.
Findings
Low-k dielectric increases read current
Enhanced current dynamic range with specific dielectric choices
Design insights for high-impedance synaptic devices
Abstract
We present an in-house modelling framework for Ferroelectric Tunnelling Junctions (FTJ), and an insightful study of the design of FTJs as synaptic devices. Results show that a moderately low-k tunnelling dielectric (e.g. SiO2) can increase the read current and the current dynamic range.
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices