Thermal transport evolution due to nanostructural transformations in Ga-doped indium-tin-oxide thin films
Alexandr Cocemasov, Vladimir Brinzari, Do-Gyeom Jeong, Ghenadii, Korotcenkov, Sergiu Vatavu, Jong S. Lee, Denis L. Nika

TL;DR
This study combines theoretical and experimental methods to analyze how Ga doping affects the thermal conductivity and phonon transport in ITO thin films, revealing a structural transition and hybridized vibrations that reduce thermal conductivity.
Contribution
It provides new insights into the structural transformation and phonon behavior in Ga-doped ITO films, linking nanostructural changes to thermal transport properties.
Findings
Thermal conductivity decreases nonlinearly with Ga doping.
Structural transformation from nanocrystalline to amorphous occurs at 15-20 at. % Ga.
Hybridized phonon vibrations cause reduced mean free paths and lower thermal conductivity.
Abstract
We report on a comprehensive theoretical and experimental investigation of thermal conductivity in indium-tin-oxide (ITO) thin films with various Ga concentrations (0-30 at. %) deposited by spray pyrolysis technique. X-Ray diffraction (XRD) and scanning electron microscopy have shown a structural transformation in the range 15-20 at. % Ga from the nanocrystalline to the amorphous phase. Room temperature femtosecond time domain thermoreflectance measurements showed nonlinear decrease of thermal conductivity in the range 2.0-0.5 W/(m K) depending on Ga doping level. Comparing density functional theory calculations with XRD data it was found that Ga atoms substitute In atoms in the ITO nanocrystals retaining Ia-3 space group symmetry. The calculated phonon dispersion relations revealed that Ga doping leads to the appearance of hybridized metal atom vibrations with avoided-crossing…
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