Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride

TL;DR

This study explores how the electronic and magneto-transport properties of tungsten ditelluride (WTe$_2$) vary with thickness, revealing changes in electronic structure, magnetoresistance, and Fermi surface anisotropy.

Contribution

It provides new insights into the thickness-dependent electronic structure and magneto-transport behavior of WTe$_2$, highlighting its transition from 3D to more 2D-like characteristics.

Findings

Thickness reduction breaks carrier balance and suppresses large positive MR.

Electronic structure of WTe$_2$ changes with thickness, confirmed by Shubnikov-de-Haas oscillations.

Fermi surface anisotropy decreases as WTe$_2$ becomes thinner.

Abstract

We investigate the electronic structure of tungsten ditelluride (WTe$_2$) flakes with different thicknesses in magneto-transport studies. The temperature-dependent resistance and magnetoresistance (MR) measurements both confirm the breaking of carrier balance induced by thickness reduction, which suppresses the `turn-on' behavior and large positive MR. The Shubnikov-de-Haas oscillation studies further confirm the thickness-dependent change of electronic structure of WTe$_2$ and reveal a possible temperature-sensitive electronic structure change. Finally, we report the thickness-dependent anisotropy of Fermi surface, which reveals that multi-layer WTe$_2$ is an electronic 3D material and the anisotropy decreases as thickness decreases.