Stability of Mn2RuxGa-based Multilayer Stacks

TL;DR

This study investigates the stability of Mn2RuxGa-based multilayer stacks with various spacer layers, revealing how interface chemistry, strain, and diffusion influence magnetic properties and anisotropy retention after annealing.

Contribution

It provides new insights into how different spacer layers affect the structural and magnetic stability of Mn2RuxGa heterostructures, especially regarding anisotropy and interface effects.

Findings

Hf and Mo increase compensation temperature Tcomp.

Strain and chemical ordering correlate with anisotropy loss.

Mo spacer stabilizes perpendicular anisotropy and promotes CoPt3 phase.

Abstract

Perpendicular heterostructures based on a ferrimagnetic Mn2RuxGa (MRG) layer and a ferromagnetic Co/Pt multilayer were examined to understand the effects of different spacer layers (V, Mo, Hf, HfOx and TiN) on the interfaces with the magnetic electrodes, after annealing at 350 C. Loss of perpendicular anisotropy in MRG is strongly correlated with a reduction in the substrate-induced tetragonality due to relaxation of the crystal structure. In the absence of diffusion, strain and chemical ordering within MRG are correlated. The limited solubility of both Hf and Mo in MRG is a source of additional valence electrons, which results in an increase in compensation temperature Tcomp. This also stabilises perpendicular anisotropy, compensating for changes in strain and defect density. The reduction in squareness of the MRG hysteresis loop measured by anomalous Hall effect is <10 %, making it useful in active devices. Furthermore, a CoPt3 phase with (2 2 0) texture in the perpendicular Co/Pt free layer promoted by a Mo spacer layer is the only one that retains its perpendicular anisotropy on annealing.