TL;DR
This study reveals that surface trenches in ultrathin ferroelectric films align domain walls by restoring polar continuity and minimizing depolarizing fields, enabling potential nanocircuit applications through lithography.
Contribution
The paper uncovers the microscopic mechanism behind ferroelectric domain wall alignment with surface trenches using large-scale density functional theory simulations.
Findings
Parallel domain wall-surface trench alignment restores polar continuity.
Surface trenches induce polar cycloidal modulations.
Simulations support experimental observations of negative strains.
Abstract
Engraving trenches on the surfaces of ultrathin ferroelectric (FE) films and superlattices promises control over the orientation and direction of FE domain walls (DWs). Through exploiting the phenomenon of DW-surface trench (ST) parallel alignment, systems where DWs are known for becoming electrical conductors could now become useful nanocircuits using only standard lithographical techniques. Despite this clear application, the microscopic mechanism responsible for the alignment phenomenon has remained elusive. Using ultrathin PbTiO films as a model system, we explore this mechanism with large scale density functional theory simulations on as many as 5,136 atoms. Although we expect multiple contributing factors, we show that parallel DW-ST alignment can be well explained by this configuration giving rise to an arrangement of electric dipole moments which best restore polar…
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