Hyperfine Structure of Transition Metal Defects in SiC

TL;DR

This paper develops a theoretical model for the hyperfine interactions of transition metal defects in silicon carbide, highlighting their potential for quantum memory applications through nuclear-electron state exchange.

Contribution

It introduces a new theory for hyperfine interactions in TM defects in SiC, enabling nuclear spin manipulation and quantum memory development.

Findings

Derived the effective hyperfine tensor within Kramers doublets.

Discussed the potential for nuclear-electron state exchange.

Highlighted applications in quantum memory technology.

Abstract

Transition metal (TM) defects in silicon carbide (SiC) are a promising platform in quantum technology, especially because some TM defects emit in the telecom band. We develop a theory for the interaction of an active electron in the $D$-shell of a TM defect in SiC with the TM nuclear spin and derive the effective hyperfine tensor within the Kramers doublets formed by the spin-orbit coupling. Based on our theory we discuss the possibility to exchange the nuclear and electron states with potential applications for nuclear spin manipulation and long-lived nunclear-spin based quantum memories.