A Raman heterodyne determination of the magnetic anisotropy for the ground and optically excited states of Y$_{2}$SiO$_{5}$ doped with Sm$^{3+}$

TL;DR

This study uses Raman heterodyne spectroscopy to precisely measure the magnetic g tensors of specific electronic states in Sm$^{3+}$:Y$_{2}$SiO$_{5}$, providing key parameters for quantum information applications.

Contribution

The paper reports the first complete determination of the magnetic g tensors for both ground and excited states in Sm$^{3+}$:Y$_{2}$SiO$_{5}$ using Raman heterodyne spectroscopy across multiple crystallographic directions.

Findings

Determined g tensors for ground and excited states at two sites.

Identified maximum g values for each state and site.

Provided essential parameters for future quantum studies.

Abstract

We present the full magnetic g tensors of the $^{6}$H$_{5/2}$Z$_{1}$ and $^{4}$G$_{5/2}$A$_{1}$ electronic states for both crystallographic sites in Sm$^{3+}$:Y$_{2}$SiO$_{5}$, deduced through the use of Raman heterodyne spectroscopy performed along 9 different crystallographic directions. The maximum principle g values were determined to be 0.447 (site 1) and 0.523 (site 2) for the ground state and 2.490 (site 1) and 3.319 (site 2) for the excited state. The determination of these g tensors provide essential spin Hamiltonian parameters that can be utilized in future magnetic and hyperfine studies of Sm$^{3+}$:Y$_{2}$SiO$_{5}$, with applications in quantum information storage and communication devices.