Establishing quasi-linear quadrupole functional topology by oxygen-vacancy engineering at a ferroelectric domain wall

TL;DR

This study demonstrates the creation and detailed atomic-scale characterization of oxygen vacancies at ferroelectric domain walls, revealing a quasi-linear quadrupole topology that influences local electrical and mechanical properties, with implications for device engineering.

Contribution

It introduces a method to engineer and analyze oxygen vacancies at ferroelectric domain walls, unveiling their quadrupole topology and local effects on properties, advancing understanding of topological defects in metal oxides.

Findings

Oxygen vacancies induce 3-5% tensile strain around themselves.

Vacancies form a quasi-linear quadrupole dipole-moment distribution.

Presence of intra-band states suggests potential for domain-wall conductivity.

Abstract

Oxygen vacancies in two-dimensional metal-oxide structures garner much attention due to unique conductive, magnetic and even superconductive functionalities they induce. Ferroelectric domain walls have been a prominent recent example because they serve as a hub for topological defects that enable unusual symmetries and are relevant for low-energy switching technologies. However, owing to the light weight of oxygen atoms and localized effects of their vacancies, the atomic-scale electrical and mechanical influence of oxygen vacancies has remained elusive. Here, stable individual oxygen vacancies were found and engineered in situ at domain walls of seminal titanate perovskite ferroics. The atomic-scale strain, electric-field, charge and dipole-moment distribution around these vacancies were characterized by combining advanced transmission electron microscopy and first-principle methodologies. 3-5 % tensile strain was observed at the immediate surrounding unit cells of the vacancies. The dipole-moment distribution around the vacancy was found to be an alternating head-to-head $-$ tail-to-tail $-$ head-to-head structure, giving rise to a quasi-linear quadrupole topology. Reduction of the nearby Ti ion as well as enhanced charging and electric-field concentration near the vacancy confirmed the quadrupole structure and illustrated its local effects on the electrical and structural properties. Significant intra-band states were found in the unit cell of the vacancies, proposing a meaningful domain-wall conductivity. Oxygen-vacancy engineering and controllable quadrupoles that enable pre-determining both atomic-scale and global functional properties offer a promising platform of electro-mechanical topological solitons and device miniaturization in metal oxides.