Versatile electronic states in epitaxial thin films of (Sn-Pb-In)Te: from topological crystalline insulator and polar semimetal to superconductor
Ryutaro Yoshimi, Makoto Masuko, Naoki Ogawa, Minoru Kawamura, Atsushi, Tsukazaki, Kei S. Takahashi, Masashi Kawasaki, Yoshinori Tokura

TL;DR
This study demonstrates the growth and characterization of (Sn-Pb-In)Te epitaxial thin films, revealing a range of electronic phases including topological insulators, semimetals, and superconductors, controlled by composition tuning.
Contribution
It provides a comprehensive phase diagram of (Sn-Pb-In)Te thin films, showing how composition influences topological, semimetallic, and superconducting states, and highlights the potential for exploring novel quantum phenomena.
Findings
Superconductivity appears at high Sn and In compositions.
Charge carrier type switches from p-type to n-type with In doping.
High mobility semimetal states observed near specific compositions.
Abstract
Epitaxial thin films of (SnPb)InTe were successfully grown by molecular-beam-epitaxy (MBE) in a broad range of compositions (0 x 1, 0 y 0.23). We investigated electronic phases of the films by the measurements of electrical transport and optical second harmonic generation. In this system, one can control the inversion of band gap, the electric polarization that breaks the inversion symmetry, and the Fermi level position by tuning the Pb/Sn ratio and In composition. A plethora of topological electronic phases are expected to emerge, such as topological crystalline insulator, topological semimetal, and superconductivity. For the samples with large Sn compositions (x > 0.5), hole density increases with In composition (y), which results in the appearance of superconductivity. On the other hand, for those with small Sn compositions (x <…
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