Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb$_2$
Z. L. Sun, A. F. Wang, H. M. Mu, H. H. Wang, Z. F. Wang, T. Wu, Z. Y., Wang, X. Y. Zhou, X. H. Chen

TL;DR
This study reports an unprecedented colossal anisotropic magnetoresistance (AMR) effect in EuMnSb$_2$, a nearly Dirac antiferromagnetic material, driven by a field-induced metal-insulator transition and strong spin-orbit coupling effects.
Contribution
The paper demonstrates a colossal AMR effect in EuMnSb$_2$ linked to Dirac-like band structure and magnetic structure, revealing new potential for antiferromagnetic spintronics applications.
Findings
Colossal AMR of 1.84×10^6% at 2 K observed.
Dirac-like band structure confirmed via density functional theory.
Field-induced MIT is crucial for the colossal AMR effect.
Abstract
How to realize applicably appreciated functionalities based on the coupling between charge and spin degrees of freedom is still a challenge in the field of spintronics. For example, anisotropic magnetoresistance (AMR) effect is utilized to read out the information stored by various magnetic structures, which usually originates from atomic spin-orbit coupling (SOC). However, the application of AMR in antiferromagnet-based spintronics is still hindered by rather small AMR value. Here, we discover a colossal AMR effect during the field-induced metal-to-insulator transition (MIT) in a nearly Dirac material EuMnSb with an antiferromagnetic order of Eu moments. The colossal AMR reaches to an unprecedented value of 1.8410% at 2 K, which is four orders of magnitude larger than previously reported values in antiferromagnets. Based on density functional theory calculations,…
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Taxonomy
TopicsTopological Materials and Phenomena · Graphene research and applications · Quantum and electron transport phenomena
