Origin of the dome-shaped superconducting phase diagram in $\mathrm{SrTiO}_3$-based interfaces
A. Jouan, S. Hurand, G. Singh, E. Lesne, A. Barth\'el\'emy, M.Bibes,, C. Ulysse, G. Saiz, C. Feuillet-Palma, J. Lesueur, N. Bergeal

TL;DR
This paper explains the dome-shaped superconducting phase diagram in SrTiO3-based interfaces as a transition between single-band and two-gap superconducting states, supported by simulations and experiments, revealing how doping methods influence the critical temperature.
Contribution
It proposes a unified scenario for the superconducting dome in SrTiO3 interfaces based on Schrödinger-Poisson simulations and experimental data, clarifying the role of band filling and doping techniques.
Findings
Optimal doping marks a transition between single-band and two-gap superconductivity.
Back-gate voltage induces filling of a high-energy subband, leading to overdoping.
Top-gate doping maintains single-band superconductivity with higher T_c.
Abstract
A dome-shaped phase diagram of superconducting critical temperature upon doping is often considered as a hallmark of unconventional superconductors. This behavior, observed in two-dimensional electron gases in -based interfaces whose electronic density is controlled by field effect, has not been explained unambiguously yet. Here, we elaborate a generic scenario for the superconducting phase diagram of these oxide interfaces based on Schr\"odinger-Poisson numerical simulations of the quantum well and transport experiments on a double-gate field-effect device. We propose that the optimal doping point of maximum marks the transition between a single-band and a fragile two-gap s-wave superconducting state involving bands of different orbital character. At the optimal doping point, we predict and observe experimentally a bifurcation in the dependence of…
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Magnetic and transport properties of perovskites and related materials · Advanced Condensed Matter Physics
