Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon

TL;DR

This study demonstrates a record high spin-to-charge conversion efficiency at room temperature in epitaxial Sb2Te3 topological insulator films grown on silicon, using chemical vapor deposition, promising for future spintronic devices.

Contribution

It reports the first large-area, chemically grown Sb2Te3 topological insulator on silicon with record spin-charge conversion efficiency at room temperature.

Findings

Inverse Edelstein Effect length up to 0.75 nm

Record efficiency for 3D chalcogenide TIs heterostructures

Successful chemical growth on large silicon substrates

Abstract

Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2Te3 TIs grown by metal organic chemical vapor deposition on 4 inches Si(111) substrates. By conducting room temperature spin pumping ferromagnetic resonance, we measure an inverse Edelstein Effect length {\lambda}IEE up to 0.75 nm, a record value for 3-dimensional chalcogenide-based TIs heterostructures. Our results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing spin-charge conversion, thus marking a milestone toward future technology-transfer.