Interplay of charge noise and coupling to phonons in adiabatic electron transfer between quantum dots

TL;DR

This paper investigates how charge noise and phonon interactions affect adiabatic electron transfer in quantum dots, revealing material-dependent effects and optimal conditions for high-fidelity quantum information transfer.

Contribution

It provides a theoretical analysis of electron-phonon and charge noise effects on adiabatic transfer, highlighting differences between Si and GaAs quantum dots and identifying optimal transfer parameters.

Findings

Electron-phonon scattering is negligible in Si quantum dots.

Charge noise and Landau-Zener effects create an optimal sweep rate for minimal electron loss.

In GaAs quantum dots, phonon interactions dominate, allowing lower electron loss at slow sweeps.

Abstract

Long-distance transfer of quantum information in architectures based on quantum dot spin qubits will be necessary for their scalability. One way of achieving it is to simply move the electron between two quantum registers. Precise control over the electron shuttling through a chain of tunnel-coupled quantum dots is possible when interdot energy detunings are changed adiabatically. Deterministic character of shuttling is however endangered by coupling of the transferred electron to thermal reservoirs: sources of fluctuations of electric fields, and lattice vibrations. We theoretically analyse how the electron transfer between two quantum dots is affected by electron-phonon scattering, and interaction with sources of $1/f$ and Johnson charge noise in both detuning and tunnel coupling. The electron-phonon scattering turns out to be irrelevant in Si quantum dots, while a competition between the effects of charge noise and Landau-Zener effect leads to an existence of optimal detuning sweep rate, at which probability of leaving the electron behind is minimal. In GaAs quantum dots, on the other hand, coupling to phonons is strong enough to make the phonon-assisted processes of interdot transfer dominate over influence of charge noise. The probability of leaving the electron behind depends then monotonically on detuning sweep rate, and values much smaller than in silicon can be obtained for slow sweeps. However, after taking into account limitations on transfer time imposed by need for preservation of electron's spin coherence, minimal probabilities of leaving the electron behind in both GaAs- and Si-based double quantum dots turn out to be of the same order of magnitude. Bringing them down below $10^{-3}$ requires temperatures $\leq \! 100$ mK and tunnel couplings above $20$ $\mu$eV.