High-Q silicon nitride drum resonators strongly coupled to gates

TL;DR

This paper introduces a silicon nitride drum resonator with aluminum coating that achieves high quality factors, strong electrical coupling, and optomechanical capabilities, advancing integrated mechanical systems for quantum and classical applications.

Contribution

It presents a novel SiN drum resonator design with aluminum coating enabling strong capacitive coupling and high quality factors, suitable for integrated optomechanical and electrical applications.

Findings

Achieved a quality factor of approximately 10,000 at room temperature.

Demonstrated detection of around 10 mechanical modes at low temperature.

Performed optomechanical sideband pumping with good coupling strength.

Abstract

Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling to an electrical circuit for efficient on-chip integration. Here, we present a SiN drum resonator covered with an aluminum thin film, enabling large capacitive coupling to a suspended top-gate. Implementing the full electrical measurement scheme, we demonstrate a high quality factor ~ 1E4 (comparable to that of bare drums at room temperature) and present our ability to detect ? 10 mechanical modes at low temperature. The drum resonator is also coupled to a microwave cavity, so that we can perform optomechanical sideband pumping with a fairly good coupling strength G and demonstrate mechanical parametric amplification. This SiN drum resonator design provides efficient electrical integration and exhibits promising features for exploring mode coupling and signal processing.