Physical properties of amorphous molybdenum silicide films for single photon detectors

TL;DR

This study explores the physical properties of amorphous MoSi films, revealing how their superconducting characteristics depend on composition and thickness, with implications for single-photon detector applications.

Contribution

It provides a systematic analysis of MoSi films' superconductivity and demonstrates their potential for single-photon detection at various wavelengths.

Findings

Highest $T_C$=7.9 K at x=0.83 in MoSi films.

Superconductivity persists in thin films ($\, extless$1 nm) despite degradation in thicker films.

Microwires exhibit single-photon sensitivity at 780 nm and 1550 nm.

Abstract

We systematically investigated the physical properties of amorphous Mo$_{\rm x}$Si$_{1-x}$ films deposited by the magnetron co-sputtering technique. The critical temperature $T_C$ of Mo$_{\rm x}$ Si$_{1-x}$ films increases gradually with the stoichiometry x, and the highest $T_C$=7.9 K was found in Mo$_{\rm 0.83}$ Si$_{0.17}$. Beyond $x$=0.83, preformed Cooper pairs and superconducting domains persist in the films, despite the superconducting state with perfect zero-resistivity is absent. The thick films of Mo$_{\rm 0.83}$ Si$_{0.17}$ show surprising degradation in which the onset of zero-resistivity is suppressed below 2 K. The thin Mo$_{\rm 0.83}$ Si$_{0.17}$ films, however, reveal robust superconductivity even with thickness d$\leq$1 nm. We also characterized wide microwires based on the 2 nm thin Mo$_{\rm 0.8}$ Si$_{0.2}$ films with widths 40 and 60 $\mu$m, which show single-photon sensitivity at 780 nm and 1550 nm wavelength