Spin digitizer for high-fidelity readout of a cavity-coupled silicon triple quantum dot

TL;DR

This paper demonstrates a high-fidelity, fast, and minimally invasive spin readout technique for silicon quantum dots using an in-line charge sensor coupled to a microwave cavity, achieving over 99% fidelity.

Contribution

It introduces a novel in-line charge sensor integrated within a triple quantum dot system that enables reliable, high-fidelity spin state readout with minimal device complexity.

Findings

Sensor response with SNR >450 at 1 μs integration time

Achieved >99% single-shot spin readout fidelity

Measured spin relaxation times in a silicon quantum dot system

Abstract

An important requirement for spin-based quantum information processing is reliable and fast readout of electron spin states, allowing for feedback and error correction. However, common readout techniques often require additional gate structures hindering device scaling or impose stringent constraints on the tuning configuration of the sensed quantum dots. Here, we operate an in-line charge sensor within a triple quantum dot, where one of the dots is coupled to a microwave cavity and used to readout the charge states of the other two dots. Owing to the proximity of the charge sensor, we observe a near-digital sensor response with a power signal-to-noise ratio >450 at an integration time of $t_{\rm int}$ = 1 $\mu$s. Despite small singlet-triplet splittings $\approx$40 $\mu$eV, we further utilize the sensor to measure the spin relaxation time of a singlet-triplet qubit, achieving an average single-shot spin readout fidelity >99%. Our approach enables high-fidelity spin readout, combining minimal device overhead with flexible qubit operation in semiconductor quantum devices.