Analytical description of the 1s exciton linewidth temperature-dependence in transition metal dichalcogenides

TL;DR

This paper derives an analytical model for the temperature-dependent linewidth of 1s excitons in transition metal dichalcogenides, accounting for radiative decay and phonon scattering, aligning well with experimental data.

Contribution

It introduces an analytical expression for exciton linewidth as a function of temperature using a variational approach to solve the Wannier equation.

Findings

The linewidth is dominated by radiative decay, intravalley, and intervalley phonon scattering.

The model agrees well with existing experimental data.

It enables prediction of linewidth at any temperature for 2D excitonic materials.

Abstract

We obtain an analytical expression for the linewidth of the 1s-exciton as a function of temperature in transition metal dichalcogenides. The total linewidth, as function of temperature, is dominated by three contributions: (i) the radiative decay (essentially temperature independent); (ii) the phonon-induced intravalley scattering; (iii) the phonon-induced intervalley scattering. Our approach uses a variational \emph{Ansatz} to solve the Wannier equation allowing for an analytical treatment of the excitonic problem, including rates of the decay dynamics. Our results are in good agreement with experimental data already present in the literature and can be used to readily predict the value of the total linewidth at any temperature in the broad class of excitonic two-dimensional materials.