Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates

TL;DR

This study demonstrates that thinning the GaInAs middle cell and Ge bottom cell in GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si substrates prevents cracking, enabling near-ideal performance despite high dislocation densities.

Contribution

The paper introduces a method of thinning specific layers in multijunction solar cells to prevent cracking, supported by theoretical analysis and experimental validation.

Findings

Thinned GaInAs middle cell reduces cracking in 3-junction cells.

Crack-free cells achieved despite high dislocation densities.

Efficiency loss remains below 3% with optimized thinning.

Abstract

Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical analysis performed using realistic device parameters indicates that the GaInAs middle cell can be drastically thinned to 1000 nm while increasing its In content to 8% with an efficiency loss in the 3-junction cell below 3%. The experimental results show that the formation of macroscopic cracks is prevented in thinned GaInAs/Ge 2-junction and GaInP/GaInAs/Ge 3-junction cells. These prototype crack-free multijunction cells demonstrate the concept and were used to rule out any possible component integration issue. The performance metrics are limited by the high threading dislocation density over 2e7cm-2 in the virtual substrates used, but an almost current matched, crack-free, thinned 3-junction solar cell is demonstrated, and the pathway towards solar cells with higher voltages identified.