Accessing slip activity in high purity tin with electron backscatter diffraction and measurement of slip strength

TL;DR

This study measures the critical resolved shear stress of individual slip systems in high purity beta-tin using micropillar compression tests, providing insights into its slip activity relevant for electronic component reliability.

Contribution

It introduces a method to directly measure slip system shear stresses in high purity beta-tin, enhancing understanding of its deformation mechanisms.

Findings

Measured critical resolved shear stresses for specific slip systems.

Identified slip systems active in high purity tin.

Quantified slip strength at room temperature.

Abstract

Beta-tin has been used widely as an interconnect in modern electronics. To improve the understanding of the reliability of these components, we directly measure the critical resolved shear stress of individual slip systems in beta-tin using micropillar compression tests at room temperature with crystal orientations near-[100] and [001] in the loading direction within a large grain high purity tin (99.99%) sample. This activates the (110)[1-11]/2, (110)[1-1-1]/2, (010)[001] and (110)[001] slip systems. Analysis of the slip traces and load-displacement curves enables measurement of the critical resolved shear stress for epsilon=10^(-4) of tau_(CRSS)^({110}<1-11>/2)=10.4+/-0.4 and tau_(CRSS)^({010}<001>)=3.9+/-0.3 MPa.