Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells

TL;DR

This study investigates how temperature and light intensity affect the open-circuit voltage of InGaN/GaN multi-quantum well solar cells, demonstrating that a modified ABC model accurately predicts their behavior.

Contribution

It introduces a temperature-dependent Shockley-Read-Hall lifetime into the ABC model to accurately analyze the voltage dependence under varying conditions.

Findings

The ABC model can accurately reproduce voltage dependence when modified.

Device heating significantly influences the open-circuit voltage.

Model remains valid up to 725 K and over 1000 suns intensity.

Abstract

We have analyzed the temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperature-dependent Shockley-Read-Hall lifetime is used and device heating is taken into account.