Resistive switching of tetraindolyl derivative in ultrathin films: A potential candidate for non-volatile memory applications

TL;DR

This study demonstrates that organic tetraindolyl derivative films exhibit bipolar resistive switching with high stability and retention, making them promising candidates for non-volatile memory devices.

Contribution

The paper reports a new resistive switching device using an organic tetraindolyl derivative with detailed morphological analysis and excellent memory performance.

Findings

High memory window and data retention

Stable and repeatable resistive switching behavior

Potential for non-volatile memory applications

Abstract

Bipolar resistive switching using organic molecule is very promising for memory application owing to their advantages like simple device structure, low manufacturing cost, their stability and flexibility etc. Herein we report Langmuir-Blodgett and spin-coated film based bipolar resistive switching devices using organic material indole derivative. Pressure - area per molecule isotherm, Brewster Angle Microscopy, Atomic Force Microscopy and Scanning Electron Microscopy were used to have an idea about organization and morphology of the organic material onto thin film. Based on device structure and measurement protocol it is observed that the device made up of 1 shows non-volatile Resistive Random Access Memory behaviour with very high memory window, data sustainability and repeatability.Oxidation-reduction process as well as electric field driven conduction are the key behind such switching behaviour.Due to very good data retention, repeatability, stability and high device yield the switching device designed using compound 1may be a potential candidate for memory applications.