Anisotropic magnetoresistance and memory effect in bulk systems with extended defects

TL;DR

This paper investigates how memory effects caused by extended defects in 3D conducting systems lead to anisotropic magnetoresistance, especially when magnetic fields align with defect axes, revealing a new way to detect such defects.

Contribution

It introduces a novel mechanism where electron capture on spiral trajectories around extended defects causes strong negative magnetoresistance and anisotropy in bulk systems.

Findings

Memory effects induce giant negative magnetoresistance.

Magnetoresistance anisotropy occurs without spin-orbit effects.

The resistivity feature can detect one-dimensional defects.

Abstract

Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured by the presence of the extended one-dimensional defects, such as screw dislocations or static charge stripes. We demonstrate that accounting for the memory effect, that is the capture of electrons on collisionless spiral trajectories winding around extended defects, leads to the strong negative magnetoresistance in case when the external magnetic field direction becomes parallel to the defects axis. This effect gives rise to a significant magnetoresistance anisotropy already for an isotropic Fermi surface and no spin-orbit effects. The proposed resistivity feature can be used to detect one-dimensional scattering defects in these systems.