Enhanced spin injection in molecularly functionalized graphene via ultra-thin oxide barriers

TL;DR

This paper presents a novel method for improving spin injection efficiency in graphene spintronic devices by using laser-assisted chemical functionalization to create high-quality ultra-thin Al2O3 tunnel barriers, overcoming previous limitations.

Contribution

It introduces a new approach combining chemical functionalization and laser patterning to enhance spin injection in graphene devices with stable, ultra-thin oxide barriers.

Findings

Order of magnitude increase in spin signals.

Effective suppression of resistance mismatch issues.

High-quality, smooth Al2O3 tunnel barriers achieved.

Abstract

Realisation of practical spintronic devices relies on the ability to create and detect pure spin currents. In graphene-based spin valves this is usually achieved by injection of spin-polarized electrons from ferromagnetic contacts via a tunnel barrier, with Al2O3 and MgO used most widely as barrier materials. However, the requirement to make these barriers sufficiently thin often leads to pinholes and low contact resistances which in turn results in low spin injection efficiencies, typically 5% at room temperature, due to the so-called resistance mismatch problem. Here we demonstrate an alternative approach to fabricate ultra-thin tunnel barrier contacts to graphene. We show that laser-assisted chemical functionalization of graphene with sp3-bonded phenyl groups effectively provides a seed layer for growth of ultrathin Al2O3 films, ensuring smooth, high quality tunnel barriers and an enhanced spin injection efficiency. Importantly, the effect of functionalization on spin transport in the graphene channel itself is relatively weak, so that the enhanced spin injection dominates and leads to an order of magnitude increase in spin signals. Furthermore, spatial control of functionalization using a focused laser beam and lithographic techniques can in principle be used to limit functionalization to contact areas only, further reducing the effect on the graphene channel. Our results open a new route towards circumventing the resistance mismatch problem in graphene-based spintronic devices based on the easily available and highly stable Al2O3, and facilitate a step forward in the development of their practical applications.