Mott Memristors based on Field-Induced Carrier Avalanche Multiplication

TL;DR

This paper introduces a theory of Mott memristors utilizing non-linear carrier avalanche multiplication in Mott insulators, enabling fast, electronic-based memristive behavior suitable for neuromorphic computing.

Contribution

It presents a novel theoretical model for Mott memristors based on carrier avalanche effects, demonstrating their potential for high-speed, electronic neuromorphic applications.

Findings

Hysteretic current-voltage behavior with negative differential resistance.

Self-sustained spiking oscillations in circuit simulations.

Memristor response is significantly faster than ionic or thermal-based devices.

Abstract

We present a theory of Mott memristors whose working principle is the non-linear carrier avalanche multiplication in Mott insulators subject to strong electric fields. The internal state of the memristor, which determines its resistance, is encoded in the density of doublon and hole excitations in the Mott insulator. In the current-voltage characteristic, insulating and conducting states are separated by a negative-differential-resistance region, leading to hysteretic behavior. Under oscillating voltage, the response of a voltage-controlled, non-polar memristive system is obtained, with retarded current and pinched hysteresis loop. As a first step towards neuromorphic applications, we demonstrate self-sustained spiking oscillations in a circuit with a parallel capacitor. Being based on electronic excitations only, this memristor is up to several orders of magnitude faster than previous proposals relying on Joule heating or ionic drift.