Quantum Capacitance Induced Non-Local Electrostatic Gating Effect in Graphene
Aolin Deng, Cheng Hu, Peiyue Shen, Xingdong Luo, Jiajun Chen, Bosai, Lyu, Kenji Watanabe, Takashi Taniguchi, Qi Liang, Jie Ma, Zhiwen Shi

TL;DR
This paper demonstrates a non-local electrostatic gating effect in graphene, where a remote gate over 30 micrometers away can efficiently tune charge density, enabled by quantum capacitance and water molecule-assisted screening.
Contribution
It reveals a novel non-local gating mechanism in graphene driven by quantum capacitance and water-assisted electric field screening, enabling remote control of electronic properties.
Findings
Charge density of graphene can be tuned remotely over 30 μm.
Non-local gating is driven by in-plane electric fields near the Dirac point.
Absorbed water molecules amplify the non-local effect through screening.
Abstract
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability. However, remote control of a FET device through a gate electrode placed far away is always highly desired, because it not only reduces the complexity of device fabrication, but also enables designing novel devices with new functionalities. Here, a non-local gating effect in graphene using both near-field optical nano-imaging and electrical transport measurement is reported. With assistance of absorbed water molecules, the charge density of graphene can be efficiently tuned by a local-gate placed over 30 {\mu}m away. The observed non-local gating effect is initially driven by an in-plane electric field established between graphene regions with different…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Graphene research and applications · Quantum-Dot Cellular Automata
