Large voltage-tunable spin valve based on a double quantum dot

TL;DR

This paper investigates a voltage-tunable spin valve based on a double quantum dot system, demonstrating enhanced magnetoresistance and controllable spin-polarized currents through electrical and magnetic configurations.

Contribution

It introduces a novel double quantum dot spin valve with tunable exchange fields, enabling high magnetoresistance and spin polarization control via electrical means.

Findings

Enhanced normal and inverse tunnel magnetoresistance observed.

Generation of highly spin-polarized currents controllable by gate voltages.

System acts as an efficient voltage-tunable spin valve.

Abstract

We study the spin-dependent transport properties of a spin valve based on a double quantum dot. Each quantum dot is assumed to be strongly coupled to its own ferromagnetic lead, while the coupling between the dots is relatively weak. The current flowing through the system is determined within the perturbation theory in the hopping between the dots, whereas the spectrum of a quantum dot-ferromagnetic lead subsystem is determined by means of the numerical renormalization group method. The spin-dependent charge fluctuations between ferromagnets and quantum dots generate an effective exchange field, which splits the double dot levels. Such field can be controlled, separately for each quantum dot, by the gate voltages or by changing the magnetic configuration of external leads. We demonstrate that the considered double quantum dot spin valve setup exhibits enhanced magnetoresistive properties, including both normal and inverse tunnel magnetoresistance. We also show that this system allows for the generation of highly spin-polarized currents, which can be controlled by purely electrical means. The considered double quantum dot with ferromagnetic contacts can thus serve as an efficient voltage-tunable spin valve characterized by high output parameters.