Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr$_{3}$

TL;DR

This study reports on low-temperature quantum magnetotransport measurements in epitaxial CsSnBr$_{3}$ thin films, revealing two-dimensional Mott VRH and giant negative magnetoresistance, indicating potential for quantum coherent transport devices.

Contribution

It provides the first detailed analysis of quantum interference effects and transport properties in epitaxial CsSnBr$_{3}$, highlighting its suitability for quantum device applications.

Findings

Observation of two-dimensional Mott VRH conduction.

Detection of giant negative magnetoresistance.

Extraction of phase coherence length ~100 nm at low temperatures.

Abstract

Single-crystal inorganic halide perovskites are attracting interest for quantum device applications. Here we present low-temperature quantum magnetotransport measurements on thin film devices of epitaxial single-crystal CsSnBr$_{3}$, which exhibit two-dimensional Mott variable range hopping (VRH) and giant negative magnetoresistance. These findings are described by a model for quantum interference between different directed hopping paths and we extract the temperature-dependent hopping length of charge carriers, their localization length, and a lower bound for their phase coherence length of ~100 nm at low temperatures. These observations demonstrate that epitaxial halide perovskite devices are emerging as a material class for low-dimensional quantum coherent transport devices.