Double nanowires for hybrid quantum devices

TL;DR

This paper introduces a method to synthesize high-quality double InAs nanowires with superconducting layers, enabling advanced quantum device architectures with controllable interfaces and geometry.

Contribution

A novel vapor-liquid-solid growth technique for double nanowires with pristine superconductor-semiconductor interfaces using molecular beam epitaxy.

Findings

High-yield production of merged and separate nanowires

Pristine superconductor-semiconductor interfaces achieved

Demonstrated utility in quantum device electron transport measurements

Abstract

Parallel one-dimensional semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely e.g. on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity and the coupling between the different elements should be controllable in terms of their interfaces and geometry. We present a strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy. A superconducting layer is deposited onto nanowires without breaking vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires, with full or half-shell superconductor coatings. We demonstrate their utility in complex quantum devices by electron transport measurements.