Twisted monolayer and bilayer graphene for vertical tunneling transistors

TL;DR

This paper demonstrates twist-controlled resonant tunneling transistors using monolayer and bilayer graphene separated by hBN, achieving negative differential conductance through momentum-conserving tunneling conditions modulated by magnetic fields.

Contribution

It introduces a novel twist-controlled graphene-based tunneling transistor with tunable resonant conditions and NDC behavior.

Findings

Resonant tunneling achieved via crystallographic alignment.

Negative differential conductance observed under specific bias.

Magnetic field enables control over tunneling resonance.

Abstract

We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning the crystallographic orientation of the graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Under such conditions, negative differential conductance (NDC) can be achieved. Application of in-plane magnetic field leads to electrons acquiring additional momentum during the tunneling process, which allows control over the resonant conditions.