Spin polarization in Lateral two-dimensional Heterostructures

TL;DR

This paper investigates spin polarization in MoS(Se)2-WS(Se)2 heterostructures using NEGF and tight-binding models, revealing how electric fields and bias voltages can induce significant spin polarization.

Contribution

It demonstrates that electric fields and bias voltages can generate notable spin polarization in heterostructures, even without illumination, which was previously unreported.

Findings

Electric fields induce spin polarization in heterostructures.

Bias voltage enhances spin polarization without illumination.

Significant spin polarization achieved under specific conditions.

Abstract

In this work, we study the spin polarization in the $MoS(Se)_{2}-WS(Se)_{2}$ Transition metal dichalcogenide heterostructures by using the non-equilibrium Green's function (NEGF) method and a three-band tight-binding model near the edges of the first Brillouin zone. Although it has been shown that the structures have no significant spin polarization in a specific range of energy of electrons, by applying a transverse electric field in the sheet of the metal atoms, shedding light on the sample, and under a small bias voltage, a significant spin polarization in the structure could be created. Besides, by applying a suitable bias voltage between leads and applying the electric field a noticeable spin polarization can be found even without shedding the light on the heterostructures.