Current-induced magnetization dynamics in single and double layer magnetic nanopillars grown by molecular beam epitaxy

TL;DR

This paper investigates current-induced magnetization dynamics in single and double layer magnetic nanopillars fabricated by molecular beam epitaxy, revealing stable resistance states and spin wave generation at room temperature.

Contribution

It presents a novel fabrication method for magnetic nanopillars and demonstrates new magnetization behaviors and spin wave phenomena in these structures.

Findings

Observation of a stable intermediate resistance state in double layer junctions.

Detection of in-plane and out-of-plane spin precessions at room temperature.

Hysteretic switching with resistance changes larger than anisotropic magnetoresistance.

Abstract

Molecular beam epitaxy is used to fabricate magnetic single and double layer junctions which are deposited in prefabricated nanostencil masks. For all Co | Cu | Co double layer junctions we observe a stable intermediate resistance state which can be reached by current starting from the parallel configuration of the respective ferromagnetic layers. The generation of spin waves is investigated at room temperature in the frequency domain by spectrum analysis, demonstrating both in-plane and out-of-plane precessions of the magnetization of the free magnetic layer. Current-induced magnetization dynamics in magnetic single layer junctions of Cu | Co | Cu has been investigated in magnetic fields which are applied perpendicular to the magnetic layer. We find a hysteretic switching in the current sweeps with resistance changes significantly larger than the anisotropic magnetoresistance effect.