Spin Wave Based Approximate Computing
Abdulqader Mahmoud, Frederic Vanderveken, Florin Ciubotaru, Christoph, Adelmann, Said Hamdioui, Sorin Cotofana

TL;DR
This paper introduces ultra-low energy approximate computing circuits using spin waves, specifically an approximate full adder and a 2-bit multiplier, demonstrating significant energy savings and comparable error rates to existing designs.
Contribution
It proposes novel spin wave-based approximate circuits and validates their energy efficiency and functionality through micromagnetic simulations, outperforming state-of-the-art accurate and approximate implementations.
Findings
AFA consumes 43% less energy than accurate SW FA.
AFA saves up to 69% energy compared to 45nm CMOS FA.
AMUL reduces energy consumption by at least 2x compared to existing SW designs.
Abstract
Spin Waves(SWs) enable the realization of energy efficient circuits as they propagate and interfere within waveguides without consuming noticeable energy. However, SW computing can be even more energy efficient by taking advantage of the approximate computing paradigm as many applications are error-tolerant like multimedia and social media. In this paper we propose an ultra-low energy novel Approximate Full Adder(AFA) and a 2-bit inputs Multiplier(AMUL). We validate the correct functionality of our proposal by means of micromagnetic simulations and evaluate the approximate FA figure of merit against state-of-the-art accurate SW, 7nmCMOS, Spin Hall Effect(SHE), Domain Wall Motion(DWM), accurate and approximate 45nmCMOS, Magnetic Tunnel Junction(MTJ), and Spin-CMOS FA implementations. Our results indicate that AFA consumes 43% and 33% less energy than state-of-the-art accurate SW and…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsMagnetic properties of thin films · Quantum and electron transport phenomena · Ferroelectric and Negative Capacitance Devices
