Observation of multi Dirac fermion cloning induced by moir\'e potential in graphene-SiC heterostructure
C. L. Wu, Q. Wan, C. Peng, S. K. Mo, R. Z. Li, K. M. Zhao, Y. P. Guo,, C. D. Zhang, N. Xu

TL;DR
This study demonstrates how moiré potential in graphene-SiC heterostructures causes cloning of Dirac fermions, revealing new ways to engineer electronic properties in 2D materials.
Contribution
It provides direct experimental evidence of Dirac cone cloning induced by moiré potential, advancing understanding of electronic structure manipulation in graphene heterostructures.
Findings
Cloning of Dirac cones observed via ARPES.
Cloning patterns match moiré superlattice structure.
Results show moiré potential can engineer Dirac fermion behavior.
Abstract
We reexamine the electronic structure of graphene on SiC substrate by angle-resolved photoemission spectroscopy. We directly observed multiply cloning of Dirac cone, in addition to ones previously attributed to reconstruction. The locations, relative distances and anisotropy of Dirac cone replicas fully agree with the moir\'e pattern of graphene-SiC heterostructure. Our results provide a straightforward example of moir\'e potential modulation in engineering electronic structure with Dirac fermions.
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Taxonomy
TopicsGraphene research and applications · 2D Materials and Applications · Topological Materials and Phenomena
