Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu

TL;DR

This paper investigates topological semimetals, specifically CoSi, as promising materials for back-end-of-line interconnects to overcome resistance issues in scaled copper interconnects, offering new material solutions.

Contribution

It introduces the potential of topological semimetals for BEOL interconnects and provides a case study with CoSi demonstrating favorable resistance scaling properties.

Findings

CoSi shows decreasing resistance-area product with scaling.

Topological semimetals possess desirable properties for BEOL interconnects.

Material-search guidelines for topological semimetals are proposed.

Abstract

The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. This paper explores topological semimetals as a potential solution. After reviewing the desirable properties of topological semimetals for back-end-of-line (BEOL) interconnects, we use CoSi as an example to demonstrate the decreasing resistance-area product with scaling and provide material-search guidelines.