Comprehensive study of out-of-plane transport properties in BaFe$_{2}$As$_{2}$: Three-dimensional electronic state and effect of chemical substitution
Masamichi Nakajima, Masahiko Nagafuchi, Setsuko Tajima

TL;DR
This study explores the out-of-plane electrical transport in BaFe$_{2}$As$_{2}$ and its derivatives, revealing the roles of electron and hole carriers, substitution effects, and the anisotropic scattering mechanisms affecting resistivity.
Contribution
It provides a detailed analysis of out-of-plane transport mechanisms and the impact of chemical substitutions on electronic states in BaFe$_{2}$As$_{2}$, highlighting the incoherent and coherent carrier behaviors.
Findings
Electron carriers are incoherent; hole carriers are coherent.
Substitution increases residual resistivity and scattering anisotropy.
K substitution causes non-metallic behavior along the c-axis.
Abstract
We investigated the out-of-plane transport properties of parent and chemically substituted BaFeAs for various types of substitution. Based on the studies of Hall coefficient and chemical-substitution effect, we have clarified the origin for the unusual temperature dependence of out-of-plane resistivity in the high-temperature paramagnetic-tetragonal phase. Electron (hole) carriers have an incoherent (coherent) character, which is responsible for non-metallic (metallic) . Although both of electron and hole contributions are almost comparable, a slightly larger contribution comes from electrons at high temperatures, while from holes at low temperatures, resulting in a maximum in . In the low-temperature antiferromagnetic-orthorhombic phase, the major effect of substitution is to increase the residual-resistivity component, as in the case for…
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