Spin-neutral currents for spintronics
Ding-Fu Shao, Shu-Hui Zhang, Ming Li, Chang-Beom Eom, Evgeny Y., Tsymbal

TL;DR
This paper demonstrates that spin-neutral currents in certain antiferromagnets and metals can be harnessed for spintronics, enabling giant tunneling magnetoresistance effects even without net spin polarization.
Contribution
It reveals the potential of spin-neutral conductance in compensated antiferromagnets and metals for spintronic applications, supported by a design of a RuO₂-based AFMTJ showing large TMR.
Findings
RuO₂ exhibits spin-independent conductance with a non-spin-degenerate Fermi surface.
A RuO₂/TiO₂/RuO₂ AFMTJ achieves TMR as high as 500%.
Normal metals can be integrated into spintronic devices using this mechanism.
Abstract
Electric currents carrying a net spin polarization are widely used in spintronics, whereas globally spin-neutral currents are expected to play no role in spin-dependent phenomena. Here we show that, in contrast to this common expectation, spin-independent conductance in compensated antiferromagnets and normal metals can be efficiently exploited in spintronics, provided their magnetic space group symmetry supports a non-spin-degenerate Fermi surface. Due to their momentum-dependent spin polarization, such antiferromagnets can be used as active elements in antiferromagnetic tunnel junctions (AFMTJs) and produce a giant tunneling magnetoresistance (TMR) effect. Using RuO as a representative compensated antiferromagnet exhibiting spin-independent conductance along the [001] direction but a non-spin-degenerate Fermi surface, we design a RuO/TiO/RuO (001) AFMTJ, where…
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