Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell

TL;DR

This paper presents a simulation of a dual-heterojunction CIGS-based solar cell achieving near the Shockley-Queisser limit, demonstrating high efficiency through a novel design and detailed modeling.

Contribution

The study introduces a new dual-heterojunction design for CIGS solar cells and uses SCAPS-1D simulations to demonstrate efficiency approaching the SQ limit.

Findings

Achieved 47% efficiency in simulation

High short-circuit current of 59.94 mA/cm2

Efficiency reaches the SQ detailed balance limit

Abstract

In this article, we demonstrate the design and simulation of a highly-efficient n-CdS/p-CIGS/p+-CGS dual heterojunction solar cell. The simulation was performed using SCAPS-1D software with reported experimental physical parameters. The simulation performance of our proposed design arises 47% with Voc=0.98 V, Jsc=59.94 mA/cm2 and FF=80.07%, respectively. The high short circuit current and hence the high efficiency is predominantly originated from the longer wavelength absorption of photon through a tail-states-assisted two-step upconversion in dual heterojunction (DH) and thus reaches the SQ detailed balance limit of DH solar cell.