Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

TL;DR

This paper introduces a multi-scale modeling approach combining numerical simulations and small-signal analysis to evaluate the radio-frequency performance of 2D-material based FETs, accounting for non-idealities and aiding device design.

Contribution

It presents a novel integrated modeling framework that links physics-based simulations with circuit-level analysis for 2D FETs in RF applications.

Findings

Model accurately predicts RF performance of MoS2 FETs

Channel scaling impacts device performance significantly

Framework validated against experimental data

Abstract

Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support the experimental activities and to provide them with useful guidelines becomes essential. In this context, we propose a theoretical approach that combines numerical simulations and small-signal modeling to analyze 2DM-based FETs for radio-frequency applications. This multi-scale scheme takes into account non-idealities, such as interface traps, carrier velocity saturation, or short channel effects, by means of self-consistent physics-based numerical calculations that later feed the circuit level via a small-signal model based on the dynamic intrinsic capacitances of the device. At the circuit stage, the possibilities range from the evaluation of the performance of a single device to the design of complex circuits combining multiple transistors. In this work, we validate our scheme against experimental results and exemplify its use and capability assessing the impact of the channel scaling on the performance of MoS2-based FETs targeting RF applications.