Thermal Visualization of Buried Interfaces by Transient and Steady-State Responses of Time-Domain Thermoreflectance
Zhe Cheng, Fengwen Mu, Xiaoyang Ji, Tiangui You, Wenhui Xu, Tadatomo, Suga, Xin Ou, David G. Cahill, Samuel Graham

TL;DR
This paper introduces a dual-modulation-frequency TDTR technique to visualize thermal conductance across buried semiconductor interfaces, enabling non-destructive defect detection and thermal mapping at the nanoscale.
Contribution
It presents a novel TDTR mapping method that visualizes interfacial thermal conductance and steady-state temperature responses for buried interfaces, especially in nonmetal-nonmetal systems.
Findings
Successfully visualized thermal boundary conductance (TBC) variations on a 200 um x 200 um area.
Identified low TBC regions (<20 MW/m2-K) linked to weakly bonded interfaces.
Demonstrated steady-state temperature rise can probe TBC variations without thermal penetration depth limits.
Abstract
Thermal resistances from interfaces impede heat dissipation in micro/nanoscale electronics, especially for high-power electronics. Despite the growing importance of understanding interfacial thermal transport, advanced thermal characterization techniques which can visualize thermal conductance across buried interfaces, especially for nonmetal-nonmetal interfaces, are still under development. This work reports a dual-modulation-frequency TDTR mapping technique to visualize the thermal conduction across buried semiconductor interfaces for beta-Ga2O3-SiC samples. Both the beta-Ga2O3 thermal conductivity and the buried beta-Ga2O3-SiC thermal boundary conductance (TBC) are visualized for an area of 200 um x 200 um. Areas with low TBC values ( smaller than 20 MW/m2-K) are successfully identified on the TBC map, which correspond to weakly bonded interfaces caused by high-temperature annealing.…
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Taxonomy
TopicsThermal properties of materials · Ga2O3 and related materials · Ferroelectric and Piezoelectric Materials
