Enhanced coherence of all-nitride superconducting qubits epitaxially grown on silicon substrate
Sunmi Kim, Hirotaka Terai, Taro Yamashita, Wei Qiu, Tomoko Fuse,, Fumiki Yoshihara, Sahel Ashhab, Kunihiro Inomata, and Kouichi Semba

TL;DR
This paper reports the development of all-nitride superconducting qubits on silicon with significantly improved coherence times, achieved through epitaxial growth and reduced dielectric loss, advancing the prospects for fault-tolerant quantum computing.
Contribution
It introduces epitaxial NbN/AlN/NbN Josephson junctions on silicon substrates, demonstrating enhanced coherence times over traditional aluminium-based qubits.
Findings
Achieved $T_1$=16.3 μs and $T_2$=21.5 μs coherence times.
Reduced dielectric loss compared to previous NbN-based qubits.
Epitaxial growth on silicon improves qubit stability and performance.
Abstract
Improving the coherence of superconducting qubits is a fundamental step towards the realization of fault-tolerant quantum computation. However, coherence times of quantum circuits made from conventional aluminium-based Josephson junctions are limited by the presence of microscopic two-level systems in the amorphous aluminum oxide tunnel barriers. Here, we have developed superconducting qubits based on NbN/AlN/NbN epitaxial Josephson junctions on silicon substrates which promise to overcome the drawbacks of qubits based on Al/AlO/Al junctions. The all-nitride qubits have great advantages such as chemical stability against oxidation, resulting in fewer two-level fluctuators, feasibility for epitaxial tunnel barriers that reduce energy relaxation and dephasing, and a larger superconducting gap of 5.2 meV for NbN, compared to 0.3 meV for aluminium, which suppresses the…
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Taxonomy
TopicsQuantum Computing Algorithms and Architecture · Quantum Information and Cryptography · Quantum and electron transport phenomena
