Electronic statistics-on-demand: bunching, anti-bunching, positive and negative correlations in a molecular spin-valve

TL;DR

This paper demonstrates theoretically how a molecular spin-valve can be tuned to control quantum fluctuations in electron transport, enabling switching between different statistical behaviors such as bunching, anti-bunching, and correlations.

Contribution

It introduces a method to manipulate electron tunneling statistics in a molecular spin-valve by tuning parameters like electrode polarization and magnetization angle, revealing new control over quantum noise.

Findings

Positive temporal correlations due to spin-induced electron-bunching

Switching between Poisson, bunching, and anti-bunching behaviors

Correlations emerge without changes in stationary current

Abstract

One of the long-standing goals of quantum transport is to use the noise, rather than the average current, for information processing. However, achieving this requires on-demand control of quantum fluctuations in the electric current. In this paper, we demonstrate theoretically that transport through a molecular spin-valve provides access to many different statistics of electron tunneling events. Simply by changing highly tunable parameters, such as electrode spin-polarization, magnetization angle, and voltage, one is able to switch between Poisson behavior, bunching and anti-bunching of electron tunnelings, and positive and negative temporal correlations. The molecular spin-valve is modeled by a single spin-degenerate molecular orbital with local electronic repulsion coupled to two ferromagnetic leads with magnetization orientations allowed to rotate relative to each other. The electron transport is described via Born-Markov master equation and fluctuations are studied with higher-order waiting time distributions. For highly magnetized parallel-aligned electrodes, we find that strong positive temporal correlations emerge in the voltage range where the second transport channel is partially open. These are caused by a spin-induced electron-bunching, which does not manifest in the stationary current alone.