Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type doping of ZnO
N. Temahuki, F. Jomard, A. Lusson, I. Stenger, S. Hassani, J., Chevallier, J.M. Chauveau, C. Morhain, J. Barjon

TL;DR
This study investigates how deuterium diffuses in nitrogen-doped ZnO layers, revealing a nitrogen-related deep donor that traps deuterium and prevents effective p-type doping.
Contribution
It identifies the (N2)O deep donor as a key nitrogen-related trap affecting deuterium diffusion in ZnO, providing insights into doping limitations.
Findings
Deuterium diffusion depth decreases with higher nitrogen concentration.
The nitrogen-related trap has a capture radius 20 times smaller than expected for D+ and nitrogen pairs.
The (N2)O defect is the dominant nitrogen-related deep donor in the samples.
Abstract
Deuterium diffusion is investigated in nitrogen-doped homoepitaxial ZnO layers. The samples were grown under slightly Zn-rich growth conditions by plasma-assisted molecular beam epitaxy on m-plane ZnO substrates and have a nitrogen content [N] varied up to 5x1018 at.cm-3 as measured by secondary ion mass spectrometry (SIMS). All were exposed to a radio-frequency deuterium plasma during 1h at room temperature. Deuterium diffusion is observed in all epilayers while its penetration depth decreases as the nitrogen concentration increases. This is a strong evidence of a diffusion mechanism limited by the trapping of deuterium on a nitrogen-related trap. The SIMS profiles are analyzed using a two-trap model including a shallow trap, associated with a fast diffusion, and a deep trap, related to nitrogen. The capture radius of the nitrogen-related trap is determined to be 20 times smaller than…
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