Effect of electron-irradiation on layered quantum materials

TL;DR

This paper reviews how electron-irradiation affects layered quantum materials, focusing on defect creation, property modification, and potential for quantum applications, while discussing protection strategies and future opportunities.

Contribution

It provides a comprehensive overview of electron-irradiation effects on LQMs, highlighting methods to control and utilize defect engineering for quantum technologies.

Findings

Electron-irradiation induces structural defects in LQMs.

Controlled irradiation can modify optoelectronic properties.

Encapsulation protects LQMs from irradiation damage.

Abstract

Technological advancement towards the quantum era requires secure communication, quantum computation, and ultra-sensitive sensing capabilities. Layered quantum materials (LQMs) have remarkable optoelectronic and quantum properties that can usher us into the quantum era. Electron microscopy is the tool of choice for measuring these LQMs at an atomic and nanometer scale. On the other hand, electron-irradiation of LQMs can modify various material properties, including the creation of structural defects. We review different types of structural defects, as well as electron elastic- and inelastic-scattering induced processes. Controlled modification of optoelectronic and quantum properties of LQMs using electron-irradiation, including creation of single photon emitters is discussed. Protection of electron-irradiation induced damage of LQMs via encapsulation by other layered materials is encouraged. We finally give insights into challenges and opportunities, including creating novel structures using an electron beam.