Quantifying the charge carrier interaction in metallic twisted graphene superlattices
E.F. Talantsev

TL;DR
This paper analyzes charge carrier interactions in twisted bilayer graphene by generalizing the Bloch-Grüneisen equation, revealing a transition from electron-phonon to other interactions depending on the Moiré pattern and carrier concentration.
Contribution
It introduces a generalized Bloch-Grüneisen equation with a variable exponent n to interpret temperature-dependent resistivity in TBG, linking n to different charge interaction mechanisms.
Findings
Linear resistance in TBG corresponds to n≈1, indicating quasielastic phonon interactions.
The exponent n varies from 1.4 to 4.4 depending on the Moiré pattern and carrier density.
Different charge interaction mechanisms transition smoothly as n changes.
Abstract
The mechanism of charge carrier interaction in twisted bilayer graphene (TBG) remains an unresolved problem, where some researchers proposed the dominance of the electron-phonon interaction, while the others showed evidence for electron-electron or electron-magnon interactions. Here we propose to resolve this problem by generalizing the Bloch-Gr\"uneisen equation and using it for the analysis of the temperature dependent resistivity in TBG. It is a well-established theoretical result that the Bloch-Gr\"uneisen equation power-law exponent, n, exhibits exact integer values for certain mechanisms. For instance, n=5 implies the electron-phonon interaction, n=3 is associated with electron-magnon interaction and n=2 applies to the electron-electron interaction. Here we interpret the linear temperature-dependent resistance, widely observed in TBG, as n1, which implies the…
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