Topological insulators in the NaCaBi family with large SOC gaps
Dexi Shao, Zhaopeng Guo, Xianxin Wu, Simin Nie, Jian Sun, Hongming, Weng, Zhijun Wang

TL;DR
This paper predicts a new family of NaCaBi-based materials as strong topological insulators with large SOC gaps, using first-principles calculations, revealing their potential for room-temperature applications.
Contribution
The study introduces a new NaCaBi family with large SOC gaps as topological insulators, expanding the material candidates for topological quantum devices.
Findings
NaCaBi is a strong topological insulator with a 0.34 eV SOC gap.
Other family members are stable at ambient conditions.
Nodal ring exists without SOC and gaps upon SOC inclusion.
Abstract
By means of first-principles calculations and crystal structure searching techniques, we predict that a new NaCaBi family crystallized into the ZrBeSi-type structure (\ie ) are strong topological insulators (STIs). Taking NaCaBi as an example, the calculated band structure indicates that there is a band inversion between two opposite-parity bands at the point. In contrast to the well-known BiSe family, the band inversion in the NaCaBi family has already occured even without spin-orbit coupling (SOC), giving rise to a nodal ring surrounding in the plane (protected by symmetry). With time reversal symmetry and inversion symmetry , the spinless nodal-line metallic phase protected by is the weak-SOC limit of the spinful topological insulating phase. Upon including SOC, the nodal ring is…
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