Hot-Carrier Cooling in High-Quality Graphene is Intrinsically Limited by Optical Phonons
Eva A. A. Pogna, Xiaoyu Jia, Alessandro Principi, Alexander Block,, Luca Banszerus, Jincan Zhang, Xiaoting Liu, Thibault Sohier, Stiven Forti,, Karuppasamy Soundarapandian, Bernat Terr\'es, Jake D. Mehew, Chiara, Trovatello, Camilla Coletti, Frank H.L. Koppens, Mischa Bonn

TL;DR
This study reveals that hot-carrier cooling in high-quality graphene is intrinsically limited by optical phonons, with ultrafast cooling driven by optical phonon emission rather than disorder-assisted acoustic phonon scattering.
Contribution
The paper demonstrates that optical phonon emission is the dominant intrinsic cooling mechanism in high-quality graphene, challenging previous assumptions about disorder-assisted acoustic phonon scattering.
Findings
Cooling occurs on a timescale of a few picoseconds.
Cooling is limited by optical-to-acoustic phonon coupling.
Intrinsic cooling mechanism involves continuous re-thermalization during phonon emission.
Abstract
Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cmVs and environments that do not efficiently take up electronic heat from graphene: WSe-encapsulated graphene and suspended graphene. We study the cooling…
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