Ion implantation in \b{eta}-Ga2O3: physics and technology

TL;DR

This paper reviews the physics and technological applications of ion implantation in ta-Ga2O3, highlighting experimental, theoretical, and device development aspects for electronics and optoelectronics.

Contribution

It provides a comprehensive overview of ion implantation effects, experimental results, theoretical insights, and device applications in ta-Ga2O3, advancing understanding in this emerging material.

Findings

Damage under ion irradiation characterized

Properties of doped Ga2O3 layers analyzed

Implications for device performance discussed

Abstract

Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique properties, such as an ultra-wide band gap and a very high breakdown electric field, finding a number of applications in electronics and optoelectronics. Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices. Here, the current status of ion beam implantation in \b{eta}-Ga2O3 is reviewed. The main attention is paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation. The results of ab initio theoretical calculations of the impurities and defects parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted. The use of ion implantation in the development of such Ga2O3-based devices as metal oxide field effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics. Finally, the most important challenges to be overcome in this field of science and technology are discussed.