Determining the optimum thickness for high harmonic generation from nanoscale thin films: an ab initio computational study

TL;DR

This study uses advanced ab initio simulations to identify the optimal silicon thin film thickness (2-15 nm) for maximum high harmonic generation efficiency, considering effects like surface structure and light propagation.

Contribution

It introduces a comprehensive ab initio computational approach to determine the optimal thickness for high harmonic generation in nanoscale silicon films, combining multiple theoretical methods.

Findings

Maximum HHG occurs at 2-15 nm thickness

Reflected and transmitted HHG signals are identical in thin films

HHG intensity correlates with electric field at surfaces

Abstract

We theoretically investigate high harmonic generation (HHG) from silicon thin films with thicknesses from a few atomic layers to a few hundreds of nanometers, to determine the most efficient thickness for producing intense HHG in the reflected and transmitted pulses. For this purpose, we employ a few theoretical and computational methods. The most sophisticated method is the ab initio time-dependent density functional theory coupled with the Maxwell equations in a common spatial resolution. This enables us to explore such effects as the surface electronic structure and light propagation, as well as electronic motion in the energy band in a unified manner. We also utilize a multiscale method that is applicable to thicker films. Two-dimensional approximation is introduced to obtain an intuitive understanding of the thickness dependence of HHG. From these ab initio calculations, we find that the HHG signals are the strongest in films with thicknesses of 2-15 nm, which is determined by the bulk conductivity of silicon. We also find that the HHG signals in the reflected and transmitted pulses are identical in such thin films. In films whose thicknesses are comparable to the wavelength in the medium, the intensity of HHG signals in the reflected (transmitted) pulse is found to correlate with the magnitude of the electric field at the front (back) surface of the thin film.